An Introduction To Power Electronic

  An Introduction To Power Electronic

--- Power electronic is a device which worked as an interface between the load and the source.

* Block Diagram :

 * Characteristics of a power electronic device :

--- Power electronic devices support the flow of power in both the direction i.e.,

the flow of power from the source to load or flow of power from load to source.

* Application of Power Electronic :

 I . It is used in Electromagnetic devices.

II . It is used in the Electric machine.

III . It is used in the power system.

IV . It is used in the signal processing.

* Note: Power electronic device which can help to convert the variable frequency and variable voltage into fixed frequency and fixed voltage.

* Types of power electronic circuits :

I .  AC - DC CONVERTER ( CONTROLLED RECTIFIER ).

II . DC - DC CONVERTER ( DC CHOPPERS ) .

III .  DC - AC CONVERTER ( INVERTERS ) .

IV . STATIC SWITCH.

V . DIODE RECTIFIER .

Now let's discuss it one by one,

I .  AC - AC CONVERTER ( CONTROLLED RECTIFIER ): AC - AC CONVERTER is a power electronic device which can convert one type of AC signal wave form to another type of AC waveform without changing the frequency and voltage.

II . DC - DC CONVERTER ( DC CHOPPERS ): DC - DC CONVERTER is a power electronic device which can convert the one form of dc signal into the another form.

III .  DC - AC CONVERTER ( INVERTERS ): DC - AC CONVERTER is basically an inverter which can convert the dc supply into the AC supply.

IV . STATIC SWITCH: STATIC SWITCH is a power electronic device which can able to allow the instantaneous supply of power to the load.

V . DIODE RECTIFIER: DIODE RECTIFIER is a power electronic device which can convert the AC signal into the dc signal.

* Note: Semiconductor is a power electronic device.

* There are many semiconductor power electronic devices such as :

--- Thyristor.

--- Diode.

--- TRIAC.

--- GTO.

--- MOSFET

.

--- IGBT .

Now let us discuss it one by one as follows,

* Thyristor: Thyristor is a solid state semiconductor device which has four layers.

The thyristor is also known as SCR ( Semi-controlled rectifier ).

--- Diagram of Thyristor :

--- The most commonly used thyristor is silicon controlled rectifier (SCR).

--- Thyristor used in high current devices.

* Application of thyristor :

--- AC-DC CONVERTER.

--- SWITCH.

:: The switching action in the power electronic device may be done by the diode.

* DIODE: A diode is a two terminal semiconductor device which can allow the flow of current in uni-direction.

 --- Diagram of a diode :

* Triac: Triac is a bi-directional thyristor with tree terminal.

Triac is a modification of SCR ( Silicon Controlled Rectifier ).

* Need of Triac :

Triac is able to conduct in both directions unlike of SCR ( silicon controlled rectifier ).

* Diagram of Triac :

--- Triac can be made up of simply joining the two SCR ( silicon controlled rectifier ).

* Note: Triac is an AC device.

* GTO: ‘ GTO ‘ stands for gate turn off thyristor. It can be able to work in the high power condition.

‘ GTO ‘ is a three terminal device which has “P-N-P-N “ semiconductor layer.

* Need of GTO ( Gate Turn Off Thyristor ) :

--- General thyristor can be turned on by the gate terminal but it not able to turn off by the gate terminal of the thyristor.

But in the case of GTO thyristor both the turn on and turn off process can be done by the gate terminal.

* Diagram of GTO :

--- The diagram of the GTO can be represented as :

* MOSFET: “ MOSFET “ stands for metal oxide semiconductor field effect transistor.

MOSFET act as a switch.

* Diagram of MOSFET :

--- Diagram of MOSFET is given as :

* IGBT: “ IGBT “ stands for insulated gate bipolar transistor.

It is a device having three terminal which is mainly used as an electronic switch.These terminal which is mainly used as an electronic switch.

--- These three terminal are an emitter, collector, and base.

* Symbol of IGBT :

--- The symbol of IGBT is given as :

* Concept of IGBT :

--- IGBT is made up of by the combining the concept of both the BJT and MOSFET such that its gain became high.